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60 积分 2023-08-30 加入
GaN MOS-HEMT Using Ultra-Thin Al 2 O 3 Dielectric Grown by Atomic Layer Deposition
1天前
求助中
Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing
19天前
已完结
Defect passivation and enhanced UV emission in β-Ga2O3 via remote fluorine plasma treatment
1个月前
已完结
Nano copper-modified GO and CNTs for enhanced the epoxy resin composite thermal properties
1个月前
已完结
High-performance AlGaN/GaN HEMTs with Hf0.5Zr0.5O2-based ferroelectric gate by pulsed laser deposition
2个月前
已完结
Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure
2个月前
已完结
The unique carrier mobility of Janus MoSSe/GaN heterostructures
3个月前
已完结
Controlled ferroelectric switching in ultrawide bandgap AlN/ScAlN multilayers
3个月前
已完结
Progress of GaN-Based E-mode HEMTs
5个月前
已完结
Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas
5个月前
已完结
Conformal Prediction for Time Series
2个月前
已采纳
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