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Impact of Process Sequence and Device Architecture on Mechanical Stress and Electrical Properties of 3-D Nand Flash
9小时前
已完结
Up to 57% Reduction in Effective Resistivity of Word Lines of 3D-NAND Memory by Grain-Size Control, Material Selection, and Seam Removal
9小时前
已完结
Controlled ALE-type recess of molybdenum for future logic and memory applications
9小时前
待确认
Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND
9小时前
已完结
Reliability of Mo as Word Line Metal in 3D NAND
9小时前
已完结
Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash
9小时前
已完结
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