掺杂剂
氢
硅
杂质
兴奋剂
材料科学
工程物理
化学
物理
光电子学
有机化学
作者
J. Coutinho,Diana Gomes,V.J.B. Torres,Tarek O. Abdul Fattah,V. P. Markevich,А. R. Peaker
标识
DOI:10.1002/solr.202300639
摘要
We present a theoretical account of some of the most likely hydrogen-related reactions with impurities in n-type and p-type solar-grade silicon. These include reactions with dopants and carbon, which are relevant in the context of life-time degradation of silicon solar cells, most notably of light and elevated temperature degradation (LeTID) of the cells. Among the problems addressed, we highlight a comparative study of acceptor-enhanced dissociation of hydrogen molecules in B- and Ga-doped material, their subsequent reaction steps toward formation of acceptor-hydrogen pairs, the proposal of mechanisms which explain the observed kinetics of photo-/carrier-induced dissociation of PH and CH pairs in n-type Si, analysis of reactions involving direct interactions between molecules with P and C, and the assignment of several electron and hole traps with detailed atomistic- and wavefunction-resolved models.
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