Enhanced Sb2Se3solar cell performance through theory-guided defect control

Defects present in the absorber layer largely dictate photovoltaic device performance. Recently, a binary photovoltaic material, Sb2Se3, has drawn much attention due to its low-cost and nontoxic constituents and rapid performance promotion. So far, however, the intrinsic defects of Sb2Se3 remain elusive. Here, through a combined theoretical and experimental investigation, we revealed that shallow acceptors, SeSb antisites, are the dominant defects in Sb2Se3 produced in an Se-rich environment, where deep donors, SbSe and VSe, dominate in Sb2Se3 produced in an Se-poor environment. We further constructed a superstrate CdS/Sb2Se3 thin-film solar cell achieving 5.76% efficiency through in situ Se compensation during Sb2Se3 evaporation and through careful optimization of absorber layer thickness. The understanding of intrinsic defects in Sb2Se3 film and the demonstrated success of in situ Se compensation strategy pave the way for further efficiency improvement of this very promising photovoltaic technology. Copyright © 2017 John Wiley & Sons, Ltd.