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176 积分 2023-12-16 加入
Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review)
7天前
已完结
Advancing Silicon Carbide Electronics Technology II
14天前
已关闭
4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing
21天前
已完结
Advanced strategies for high activation in ion implanted 4H-SiC by laser annealing
26天前
已完结
Ion implantation technology for silicon carbide
1个月前
已完结
Silicon Carbide Doping by Ion Implantation
1个月前
已关闭
A Multiscale Simulation on Aluminum Ion Implantation-Induced Defects in 4H-SiC MOSFETs
1个月前
已完结
Displacement criterion for amorphization of silicon during ion implantation
1个月前
已完结
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