Lv5
810 积分 2024-01-10 加入
Effect of AlN Interlayer Thickness on 2DEG Parameters in AlGaN/AlN/GaN HEMT Structures
2天前
已完结
A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures
2天前
已完结
Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs
2个月前
已完结
High quality AlN film grown on a nano-concave-circle patterned Si substrate with an AlN seed layer
2个月前
已完结
Au-Free Al₀.₄Ga₀.₆N/Al₀.₁Ga₀.₉N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV
7个月前
已完结
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices
7个月前
已完结
A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap
7个月前
已完结
MOCVD growth of GaN on SEMI-spec 200 mm Si
7个月前
已完结
Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD
7个月前
已完结
Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface
8个月前
已完结
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