Lv41
500 积分 2024-08-16 加入
Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC
1个月前
已完结
Design and process developments towards an optimal 6.5 kV SiC power MOSFET
2个月前
已完结
Design and Manufacturing of 1200V SiC JBS Diodes with Low On-State Voltage Drop and Reverse Blocking Leakage Current
3个月前
已完结
Influence of Lateral Straggling of Implated Aluminum Ions on High Voltage 4H-SiC Device Edge Termination Design
3个月前
已完结
Design and Fabrication of 1400V 4H-SiC Accumulation Mode MOSFETs (ACCUFETs)
3个月前
已完结
Channeled implantation of magnesium ions in gallium nitride for deep and low-damage doping
3个月前
已完结
The Analysis of the Breakdown Voltage according to the Change of JTE Structures and Design Parameters of 4H-SiC Devices
3个月前
已关闭
Atomistic Mechanism of 4 H - SiC/SiO2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices
3个月前
已完结
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