栅极电压
光电子学
阈值电压
门驱动器
材料科学
等效门电路
门极关断晶闸管
逻辑门
过驱动电压
电压
薄膜晶体管
和大门
电气工程
与非门
栅氧化层
NOR门
晶体管
工程类
纳米技术
图层（电子）
作者
Pengfei Gu,Jiangbo Chen,Dini Xie,Wei Liu,Fengjuan Liu,Hongda Sun,Young Suk Song,Liangchen Yan,Zhongyuan Wu
摘要
In this paper, the mutual interaction of gate voltage between top gate and bottom gate in a‐IGZO TFT was investigated. The Vth of top gate (or bottom gate) show a parallel shift with the change of bottom gate (or top gate) voltage. The magnitude of Vth shifts can be described by some approximate analytical expression.
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