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630 积分 2023-11-16 加入
Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier
1个月前
已完结
Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al0.3Ga0.7N/GaN/i‐AlxGa1−xN/GaN High‐Electron‐Mobility Transistors
1个月前
已完结
Gallium nitride-based complementary logic integrated circuits
2个月前
已完结
Microwave MESFETs and HEMTs
2个月前
已完结
TCAD Simulation of Novel Recess Gate Common Drain Dual Channel AlGaN/GaN HEMT for Small Signal Performance
4个月前
已完结
Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure
4个月前
已完结
First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding
4个月前
已完结
650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk
4个月前
已完结
Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures
6个月前
已完结
Analog and RF Performance Evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET
6个月前
已完结
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