Lv31
300 积分 2022-04-20 加入
Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide
2小时前
已完结
Atomic Layer Deposition: An Overview
2小时前
已完结
Enhanced annealing of damage in ion-implanted 4H-SiC by MeV ion-beam irradiation
2个月前
已完结
Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing
2个月前
已完结
Reduction of Density of 4H-SiC / SiO<sub>2</sub> Interface Traps by Pre-Oxidation Phosphorus Implantation
2个月前
已完结
Study on the damage evolution of 6H-SiC under different phosphorus ion implantation conditions and annealing temperatures
2个月前
已完结
Phosphorus implantation into 4H-silicon carbide
2个月前
已完结
Phosphorus implantation into 4H-SiC at room and elevated temperature
2个月前
已完结
Characterization of phosphorus implantation in 4H-SiC
2个月前
已完结
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