Lv1
100 积分 2022-04-20 加入
Research on Dry Etching Process of Phosphorus-Doped Polysilicon
6小时前
已完结
Complete Guide to Semiconductor Devices
8天前
已完结
Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide
17天前
已完结
Atomic Layer Deposition: An Overview
17天前
已完结
Enhanced annealing of damage in ion-implanted 4H-SiC by MeV ion-beam irradiation
3个月前
已完结
Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing
3个月前
已完结
Reduction of Density of 4H-SiC / SiO<sub>2</sub> Interface Traps by Pre-Oxidation Phosphorus Implantation
3个月前
已完结
Study on the damage evolution of 6H-SiC under different phosphorus ion implantation conditions and annealing temperatures
3个月前
已完结
Phosphorus implantation into 4H-silicon carbide
3个月前
已完结
皖公网安备34019202002308
