Lv11
82 积分 2021-12-24 加入
Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization
20天前
已完结
Achieving $\ge$1200-V High-Performance GaN HEMTs on Sapphire With Carbon-Doped Buffer
20天前
已完结
High Performance AlN/GaN HEMT for Millimeter-Wave Low-Voltage Applications Fabricated Using Low-Damage Etching
25天前
已完结
5.59 W/mm at 30 GHz from E-mode AlN/GaN HEMT using selective etch of in-situ SiN passivation layer
25天前
已完结
Linearity Characterization of Enhancement- Mode p-GaN Gate Radio-Frequency HEMT
25天前
已完结
RF Enhancement-Mode p-GaN Gate HEMT on 200 mm-Si Substrates
26天前
已完结
Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In0.1Al0.5Ga0.4N Barrier
26天前
已完结
Plasma induced damage on AlGaN/GaN heterostructure during gate opening for power devices
2个月前
已完结
An Etch-Stop Barrier Structure for GaN High-Electron-Mobility Transistors
2个月前
已完结
Effective resistivity extraction of low-loss silicon substrates at millimeter-wave frequencies
2个月前
已完结
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