Lv4
700 积分 2023-03-04 加入
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness
4天前
已完结
Revealing the Role of Spacer Layer in Domain Dynamics of Hf0.5Zr0.5O2 Thin Films for Ferroelectrics
9天前
已完结
Spherical ferroelectric solitons
9天前
已完结
Back-End of Line Compatible Hf0.5Zr0.5O2 With ZrO2 Seed Layer for Enhanced Ferroelectricity
16天前
已完结
Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface
16天前
已完结
Wake-Up Free Ferroelectric Capacitor With Quadruple-Level Storage by Inserting ZrO2 Interlayer and Bottom Layer in HfZrOx
16天前
已完结
Systematic studies of the effects of group-III dopants (La, Y, Al, and Gd) in Hf0.5Zr0.5O2 ferroelectrics by ab initio simulations
22天前
已完结
Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films
22天前
已完结
Ferroelectric La-doped HfO2 Deposited via Chemical Solution on Silicon for Tellurium Field-Effect Phototransistors
22天前
已完结
Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layers
22天前
已完结
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